Demonstration of a microelectromechanical tunable asymmetric Fabry-Perot quantum well modulator

被引:9
作者
Rabinovich, WS [1 ]
Stievater, TH [1 ]
Papanicolaou, NA [1 ]
Katzer, DS [1 ]
Goetz, PG [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1063/1.1606499
中图分类号
O59 [应用物理学];
学科分类号
摘要
Asymmetric Fabry-Perot multiple quantum well modulators can have much higher extinction ratios than are otherwise possible with surface normal devices. This performance comes at the price of very tight tolerances on the epitaxial growth and high sensitivity to temperature and angle of incidence. We demonstrate that a quantum well modulator with an integrated microelectromechanical mirror can remove these sensitivities. (C) 2003 American Institute of Physics.
引用
收藏
页码:1923 / 1925
页数:3
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