Spectral response of blue-sensitive Si photodetectors in SOI

被引：19

作者：

Chu, J. ^{[1
]}

Han, Z.

Meng, F.

Wang, Z.

机构：

[1] Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Liaoning Dalian 116024, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2011年 / 55卷 / 01期

基金：

美国国家科学基金会;

关键词：

Silicon photodetector; Silicon-on-insulator; Quantum efficiency; Blue-sensitive; LATERAL PIN PHOTODIODES; SILICON-ON-INSULATOR; I-N PHOTODIODE; FILM; AREA;

D O I：

10.1016/j.sse.2010.09.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a novel blue-sensitive Si photodetector. The detector is realized as a Si diode with a vertical PN junction in the silicon-on-insulator (SOI) thin film for normal incident light. Due to the thin SOI device layer, the photodetector shows a blue-shift spectral response with the peak external quantum efficiency (QE) of 69.6% at wavelength of 480 nm. The photodetector adopts a thin layer of SiO(2) as an antireflection coating and as a blocking layer for shallow ion implantation doping. The isolation trench etched through the SOI thin film to the buried oxide (BOX) provides fully electrical isolation. The device structure is simple and its performance is very high, therefore, iris in favor of monolithically integration with other micro/nanodevices. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：54 / 58

页数：5

共 15 条

[1] Physical modeling and design of thin-film SOI lateral PIN photodiodes [J].