Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

被引：217

作者：

Xu, Sheng ^{[1
]}

Xu, Chen ^{[1
]}

Liu, Ying ^{[1
]}

Hu, Youfan ^{[1
]}

Yang, Rusen ^{[1
]}

Yang, Qing ^{[1
]}

Ryou, Jae-Hyun ^{[2
]}

Kim, Hee Jin ^{[2
]}

Lochner, Zachary ^{[2
]}

Choi, Suk ^{[2
]}

Dupuis, Russell ^{[2
]}

Wang, Zhong Lin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 42期

关键词：

LOW-TEMPERATURE; THIN-FILM; ZNO; ELECTROLUMINESCENCE; GROWTH; GAN; FABRICATION; BLUE; EXTRACTION; EFFICIENCY;

D O I：

10.1002/adma.201002134

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Blue/near-UV light-emitting diodes composed of position controlled n-ZnO nanowires arrays and a p-GaN thin film substrate are demonstrated. Under forward bias, each single nanowire is a light emitter. By Gaussian deconvolution of the emission spectrum, the origins of the blue/near-UV emission are assigned specifically to three distinct electron-hole recombination processes. The LEDs give an external quantum efficiency of 2.5%.

引用

页码：4749 / +

页数：6

共 34 条

[1] Forward-current electroluminescence from GaN/ZnO double heterostructure diode [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Liu, C ;

Moon, Y ;

Gu, X ;

Avrutin, V ;

Fu, Y ;

Morkoç, H .

SOLID-STATE ELECTRONICS, 2005, 49 (10) :1693-1696

[2] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[3] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[4] Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays [J].

An, Sung Jin ;

Chae, Jee Hae ;

Yi, Gyu-Chul ;

Park, Gil H. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

[5] Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics [J].

Asil, H. ;

Gur, Emre ;

Cinar, K. ;

Coskun, C. .

APPLIED PHYSICS LETTERS, 2009, 94 (25)

[6] Electromagnetic crystals for surface plasmon polaritons and the extraction of light from emissive devices [J].

Barnes, WL .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (11) :2170-2182

[7] A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN [J].

Bayram, C. ;

Teherani, F. Hosseini ;

Rogers, D. J. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[8] Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation [J].

Bulashevich, K. A. ;

Evstratov, I. Yu. ;

Karpov, S. Yu. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (01) :241-245

[9] Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes [J].

Choi, HW ;

Jeon, CW ;

Dawson, MD ;

Edwards, PR ;

Martin, RW ;

Tripathy, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :5978-5982

[10] Integration of ZnO microcrystals with tailored dimensions forming light emitting diodes and UV photovoltaic cells [J].

Cole, Jesse J. ;

Wang, Xinyu ;

Knuesel, Robert J. ;

Jacobs, Heiko O. .

NANO LETTERS, 2008, 8 (05) :1477-1481

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