Phase transition behaviors and thermal conductivity measurements of nitrogen-doped Sb2Te3 thin films

被引：16

作者：

Wang, Changzhou ^{[1
]}

Zhai, Jiwei ^{[1
]}

Bai, Suyuan ^{[2
,3
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Dalian Univ Technol, Dept Elect Engn, Dalian 116024, Peoples R China

[3] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 21期

关键词：

Thin films; Sb2Te3; Electrical properties; Atomic force microscopy; Thermal properties;

D O I：

10.1016/j.matlet.2010.07.059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystallization temperature of nitrogen-doped Sb2Te3 (ST) thin films increased with increasing nitrogen doping concentration, which indicates that the long-term stability of the metastable amorphous state can be improved by nitrogen doping. The root-mean-square (rms) roughness values of the films showed a significant decrease with nitrogen doping. Thermal conductivity of nitrogen-doped ST thin films was measured using a transient thermoreflectance (TTR) technique. It was found that the thermal conductivity decreased with increasing nitrogen doping concentration and increased with increasing annealing temperature. Nitrogen-doped ST thin films are suitable phase-change materials for low programming power consumption applications of phase-change random access memory (PCRAM). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2314 / 2316

页数：3

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