Bipolar switching in chalcogenide phase change memory

被引：62

作者：

Ciocchini, N. ^{[1
]}

Laudato, M. ^{[1
]}

Boniardi, M. ^{[2
]}

Varesi, E. ^{[2
]}

Fantini, P. ^{[2
]}

Lacaita, A. L. ^{[1
]}

Ielmini, D. ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, Piazza L da Vinci 32, I-20133 Milan, Italy

[2] Micron Technol, Via Torri Bianche 24, I-20871 Vimercate, MB, Italy

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

欧洲研究理事会;

关键词：

TRANSITION; DRIVEN;

D O I：

10.1038/srep29162

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Phase change materials based on chalcogenides are key enabling technologies for optical storage, such as rewritable CD and DVD, and recently also electrical nonvolatile memory, named phase change memory (PCM). In a PCM, the amorphous or crystalline phase affects the material band structure, hence the device resistance. Although phase transformation is extremely fast and repeatable, the amorphous phase suffers structural relaxation and crystallization at relatively low temperatures, which may affect the temperature stability of PCM state. To improve the time/temperature stability of the PCM, novel operation modes of the device should be identified. Here, we present bipolar switching operation of PCM, which is interpreted by ion migration in the solid state induced by elevated temperature and electric field similar to the bipolar switching in metal oxides. The temperature stability of the high resistance state is demonstrated and explained based on the local depletion of chemical species from the electrode region.

引用

页数：9

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