Field induced quenching of the energy gap in single crystal CeNiSn

被引：7
|
作者：
Sugiyama, K [1 ]
Kindo, K
Nakamoto, G
Takabatake, T
Fujii, H
机构：
[1] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 560, Japan
[2] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 560, Japan
[3] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 739, Japan
[4] Hiroshima Univ, Fac Sci, Higashihiroshima 739, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1998年 / 67卷 / 07期
关键词：
CeNiSn; high magnetic field; magnetization; magnetoresistance; Kondo semiconductor; energy gap;
D O I：
10.1143/JPSJ.67.2455
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
High-field longitudinal magnetoresistance and magnetization measurements up to 36 T have been carried out on a single crystal CeNiSn which shows metallic behavior in the resistivity along the a-axis. Large negative magnetoresistances are found along the a-, b- and c-axes in high fields above 10 T as previously reported in a semiconducting sample. A metamagnetic behaviour in the magnetization is observed along the a-axis at around 15 T. The linear field dependence of log rho(H) indicates that the Zeeman energy of the 4f-electron moment quenches the pseudo energy gap on the Fermi surface in CeNiSn.
引用
收藏
页码：2455 / 2459
页数：5
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