Field induced quenching of the energy gap in single crystal CeNiSn

被引：7

作者：

Sugiyama, K ^{[1
]}

Kindo, K

Nakamoto, G

Takabatake, T

Fujii, H

机构：

[1] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 560, Japan

[2] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 560, Japan

[3] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 739, Japan

[4] Hiroshima Univ, Fac Sci, Higashihiroshima 739, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1998年 / 67卷 / 07期

关键词：

CeNiSn; high magnetic field; magnetization; magnetoresistance; Kondo semiconductor; energy gap;

D O I：

10.1143/JPSJ.67.2455

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High-field longitudinal magnetoresistance and magnetization measurements up to 36 T have been carried out on a single crystal CeNiSn which shows metallic behavior in the resistivity along the a-axis. Large negative magnetoresistances are found along the a-, b- and c-axes in high fields above 10 T as previously reported in a semiconducting sample. A metamagnetic behaviour in the magnetization is observed along the a-axis at around 15 T. The linear field dependence of log rho(H) indicates that the Zeeman energy of the 4f-electron moment quenches the pseudo energy gap on the Fermi surface in CeNiSn.

引用

页码：2455 / 2459

页数：5

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