Investigations on junction temperature estimation based on junction voltage measurements

被引：41

作者：

Khatir, Z. ^{[1
]}

Dupont, L. ^{[1
]}

Ibrahim, A. ^{[1
]}

机构：

[1] INRETS LTN, F-78000 Versailles, France

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

LIFETIME;

D O I：

10.1016/j.microrel.2010.07.102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability and ageing tests on power semiconductor devices require estimation of junction temperatures in order to control thermal stresses and monitor failure criteria. For this purpose, thermo-electrical parameters, such as voltage forward drop dependence with temperature are usually carried out in low injection level. Nevertheless, it is still difficult to evaluate the limits of such exploitation. An analytical model has been developed and validated by experimental measurements in order to evaluate self-heating effects and to understand high temperature effects. This model should also allow to highlight the role of some physical parameters in the voltage-temperature dependence and to clarify such thermal calibration. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1506 / 1510

页数：5

共 7 条

[1]

Baliga B.J., 1987, MODERN POWER DEVICES

[2] OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient [J].