Impact of air-light exposure on the electrical properties of Cu(In,Ga)Se2 solar cells

被引：12
作者：
Hoelscher, Torsten [1 ]
Schneider, Thomas [1 ]
Maiberg, Matthias [1 ]
Scheer, Roland [1 ]
机构：
[1] Martin Luther Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany
来源：
PROGRESS IN PHOTOVOLTAICS | 2018年 / 26卷 / 11期
关键词：
interfaces; Cu(In; Ga)Se(2)solar cells; electrical device characterization; light soaking; surface degradation; THIN-FILMS; HETEROJUNCTIONS; CAPACITANCE; BULK;
D O I：
10.1002/pip.3041
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The impact of air-light exposure of bare Cu(In,Ga)Se-2 layers is investigated by measuring the performance of completed solar cells. Solar cells formed from air-light-exposed absorbers reveal inferior cell parameters by about 10% regarding open circuit voltage, fill factor, and efficiency compared with cells from nonilluminated absorbers. Time-dependent and temperature-dependent open circuit voltage measurements give reasons that the solar cell impairment by air-light exposure of the bare absorbers is due to interface recombination. Interface states are detected by admittance spectroscopy. Heat-light soaking of complete solar cellshaving formerly degraded interfacesrecovers the solar cell parameters up to the nondegraded levels. Paradoxically, both the air-light-induced degradation of bare absorbers and the revision of cell parameters after light annealing go along with a light-induced segregation of sodium at the Cu(In,Ga)Se-2 surface and Cu(In,Ga)Se-2/CdS interface, respectively.
引用
收藏
页码：934 / 941
页数：8
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