Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and β-Ga2O3

被引：20

作者：

Tran, Dat Q. ^{[1
,2
]}

Blumenschein, Nicholas ^{[3
]}

Mock, Alyssa ^{[1
,2
,4
,5
]}

Sukkaew, Pitsiri ^{[1
,2
]}

Zhang, Hengfang ^{[1
,2
]}

Muth, John F. ^{[3
]}

Paskova, Tania ^{[3
]}

Paskov, Plamen P. ^{[1
,2
,3
]}

Darakchieva, Vanya ^{[1
,2
,4
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Linkoping Univ, Ctr III Nitride Technol, C3NiT Janzen, S-58183 Linkoping, Sweden

[3] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

[4] Linkoping Univ, THz Mat Anal Ctr THeMAC, S-58183 Linkoping, Sweden

[5] Naval Res Lab, Washington, DC 20375 USA

来源：

PHYSICA B-CONDENSED MATTER | 2020年 / 579卷

基金：

瑞典研究理事会;

关键词：

Thermal conductivity; Ga2O3; AlGaN; GAN; FILMS;

D O I：

10.1016/j.physb.2019.411810

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of beta-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are analyzed with the Callaway's model taking into account all relevant phonon scattering processes. Our results show that out-of-plane thermal conductivity of high Al-content AlxGa1-xN and (-201) beta-Ga2O3 is of the same order of magnitude and approximately one order lower than that of GaN or AlN. The low thermal conductivity is attributed to the dominant phonon-alloy scattering in AlxGa1-xN and to the strong Umklapp phonon-phonon scattering in beta-Ga2O3. It is also found that the phonon-boundary scattering is essential in thin beta-Ga2O3 and AlxGa1-xN layers even at high temperatures and the thermal conductivity strongly deviates from the common 1/T temperature dependence.

引用

页数：6

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