Fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O junction and its tunnel magnetoresistance

被引：29

作者：

Song, C. ^{[1
]}

Liu, X. J. ^{[1
]}

Zeng, F. ^{[1
]}

Pan, F. ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; FERROMAGNETISM; INTERFACE;

D O I：

10.1063/1.2762297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report tunnel magnetoresistance (TMR) and its bias dependence in fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O magnetic tunnel junctions. A positive TMR of 20.8% is obtained at 4 K, which can resist up to room temperature with the TMR ratio of 0.35% at 2 T, due to improved crystallinity of barriers and electrode/barrier interfaces. The decay of TMR with bias up to 2 V is significantly small leading to V-1/2, for which half of the TMR remains, well over 2 V, shedding promising light on solving readout problems in gigabit-scale magnetoresistive random access memory.

引用

页数：3

共 21 条

[11] Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions [J].

Nozaki, T ;

Hirohata, A ;

Tezuka, N ;

Sugimoto, S ;

Inomata, K .

APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3

[12] Evidence of structural defect enhanced room-temperature ferromagnetism in Co-doped ZnO [J].

Song, C. ;

Pan, S. N. ;

Liu, X. J. ;

Li, X. W. ;

Zeng, F. ;

Yan, W. S. ;

He, B. ;

Pan, F. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (17)

[13] Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO [J].

Song, C ;

Geng, KW ;

Zeng, F ;

Wang, XB ;

Shen, YX ;

Pan, F ;

Xie, YN ;

Liu, T ;

Zhou, HT ;

Fan, Z .

PHYSICAL REVIEW B, 2006, 73 (02)

[14] Ti1-xCoxO2-δ/AlOx/Fe0.1Co0.9 magnetic tunnel junctions with varied AlOx thickness [J].

Toyosaki, H ;

Fukumura, T ;

Ueno, K ;

Nakano, M ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[15] A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction [J].

Toyosaki, H ;

Fukumura, T ;

Ueno, K ;

Nakano, M ;

Kawasaki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L896-L898

[16] Interface effects in spin-dependent tunneling [J].

Tsymbal, E. Y. ;

Belashchenko, K. D. ;

Velev, J. P. ;

Jaswal, S. S. ;

van Schilfgaarde, M. ;

Oleynik, I. I. ;

Stewart, D. A. .

PROGRESS IN MATERIALS SCIENCE, 2007, 52 (2-3) :401-420

[17] Spin-polarized transport in hybrid (Zn,Cr)Te/Al2O3/Co magnetic tunnel junctions [J].

Wang, W. G. ;

Ni, C. ;

Moriyama, T. ;

Wan, J. ;

Nowak, E. ;

Xiao, John Q. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[18] Spintronics:: A spin-based electronics vision for the future [J].

Wolf, SA ;

Awschalom, DD ;

Buhrman, RA ;

Daughton, JM ;

von Molnár, S ;

Roukes, ML ;

Chtchelkanova, AY ;

Treger, DM .

SCIENCE, 2001, 294 (5546) :1488-1495

[19] Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin films at room temperature [J].

Xu, X. H. ;

Blythe, H. J. ;

Ziese, M. ;

Behan, A. J. ;

Neal, J. R. ;

Mokhtari, A. ;

Ibrahim, R. M. ;

Fox, A. M. ;

Gehring, G. A. .

NEW JOURNAL OF PHYSICS, 2006, 8

[20] Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions [J].

Yuasa, S ;

Nagahama, T ;

Fukushima, A ;

Suzuki, Y ;

Ando, K .

NATURE MATERIALS, 2004, 3 (12) :868-871

← 1 2 3 →