Fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O junction and its tunnel magnetoresistance

被引：29

作者：

Song, C. ^{[1
]}

Liu, X. J. ^{[1
]}

Zeng, F. ^{[1
]}

Pan, F. ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; FERROMAGNETISM; INTERFACE;

D O I：

10.1063/1.2762297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report tunnel magnetoresistance (TMR) and its bias dependence in fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O magnetic tunnel junctions. A positive TMR of 20.8% is obtained at 4 K, which can resist up to room temperature with the TMR ratio of 0.35% at 2 T, due to improved crystallinity of barriers and electrode/barrier interfaces. The decay of TMR with bias up to 2 V is significantly small leading to V-1/2, for which half of the TMR remains, well over 2 V, shedding promising light on solving readout problems in gigabit-scale magnetoresistive random access memory.

引用

页数：3

共 21 条

[1]

Chun SH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.100408

[2] Role of metal-oxide interface in determining the spin polarization of magnetic tunnel junctions [J].

De Teresa, JM ;

Barthélémy, A ;

Fert, A ;

Contour, JP ;

Montaigne, F ;

Seneor, P .

SCIENCE, 1999, 286 (5439) :507-509

[3] Magnetic oxide semiconductors [J].

Fukumura, T ;

Toyosaki, H ;

Yamada, Y .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S103-S111

[4] Positive giant magnetoresistance in a Fe3O4/SrTiO3/La0.7Sr0.3MnO3 heterostructure [J].

Ghosh, K ;

Ogale, SB ;

Pai, SP ;

Robson, M ;

Li, E ;

Jin, I ;

Dong, ZW ;

Greene, RL ;

Ramesh, R ;

Venkatesan, T ;

Johnson, M .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :689-691

[5] Magnetic Anisotropies and (Ga,Mn)As-based spintronic devices [J].

Gould, Charles ;

Pappert, Katrin ;

Schmidt, Georg ;

Molenkamp, Laurens W. .

ADVANCED MATERIALS, 2007, 19 (03) :323-340

[6] On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system [J].

Kundaliya, DC ;

Ogale, SB ;

Lofland, SE ;

Dhar, S ;

Metting, CJ ;

Shinde, SR ;

Ma, Z ;

Varughese, B ;

Ramanujachary, KV ;

Salamanca-Riba, L ;

Venkatesan, T .

NATURE MATERIALS, 2004, 3 (10) :709-714

[7] Electrical detection of spin accumulation in a p-type GaAs quantum well -: art. no. 166601 [J].

Mattana, R ;

George, JM ;

Jaffrès, H ;

Van Dau, FN ;

Fert, A ;

Lépine, B ;

Guivarc'h, A ;

Jézéquel, G .

PHYSICAL REVIEW LETTERS, 2003, 90 (16)

[8] Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions [J].

May, S. J. ;

Phillips, P. J. ;

Wessels, B. W. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)

[9] Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions [J].

Montaigne, F ;

Nassar, J ;

Vaures, A ;

Van Dau, FN ;

Petroff, F ;

Schuhl, A ;

Fert, A .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2829-2831

[10] Room-temperature magneto-optics of ferromagnetic transition-metal-doped ZnO thin films [J].

Neal, J. R. ;

Behan, A. J. ;

Ibrahim, R. M. ;

Blythe, H. J. ;

Ziese, M. ;

Fox, A. M. ;

Gehring, G. A. .

PHYSICAL REVIEW LETTERS, 2006, 96 (19)

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