Thermal-aware Device Design of Nano-scale Devices

被引:0
作者
Uchida, Ken [1 ]
Takahashi, Tsunaki
机构
[1] Keio Univ, Dept Elect & Elect Engn, Yokohama, Kanagawa, Japan
来源
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页数:2
相关论文
共 5 条
[1]  
Auth C., 2012, S VLSI TECHN, V131
[2]  
Beppu N., 2012, INT EL DEV M IEDM, V641
[3]   Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons [J].
Shindome, Aya ;
Doioka, Yu ;
Beppu, Nobuyasu ;
Oda, Shunri ;
Uchida, Ken .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
[4]  
Su L. T., 1996, IEEE T ELECTRON DEV, V43, P2240
[5]  
Takahashi T., 2013, INT EL DEV M IEDM