Study of the removal of boron from metallurgical grade silicon by oxidation slagging method

被引:7
作者
Hu, Yuyan [1 ]
Lu, Dongliang [1 ]
Lin, Tao [1 ]
Liu, Yu [1 ]
Wang, Bo [1 ]
Guo, Changjuan [1 ]
Sun, Yanhui [1 ]
Chen, Hongyu [1 ]
Li, Qianshu [1 ]
机构
[1] S China Normal Univ, Sch Chem & Environm, Guangzhou 510006, Guangdong, Peoples R China
来源
ADVANCED MANUFACTURING TECHNOLOGY, PTS 1, 2 | 2011年 / 156-157卷
关键词
metallurgical grade silicon; oxidation refining; slagging; removing boron; THERMODYNAMICS;
D O I
10.4028/www.scientific.net/AMR.156-157.882
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Refining of solar grade silicon by metallurgical method is the research hotspot of polycrystalline field. Slagging method is benefit to the removal of the impurities especially to boron exsisted in the raw silicon. In this study, the influence of the density, the viscosity and liquidus temperature of the slag components on the refining process were discussed, and then the slag system SiO(2)-Na(2)CO(3) was choosed as the slagging agents. And then the impact factors on the removal efficiency of boron such as the composition of SiO(2) and Na(2)CO(3), the ratio of slag to silicon and the refining time were investigated by the orthogonal experiment. The results showed that the optimum parameters of the oxidation refining for removing boron were as follows: the main composition of the oxidant is "SiO(2): Na(2)CO(3) = 60% : 40%"; the slag/silicon ratio is 0.5; time for refining is 60min at 1550 degrees C. The results indicated that the removal efficiency of boron was 88.28%, and the content of boron in MG-Si can be reduced to 7ppmw under the best refining process.
引用
收藏
页码:882 / 885
页数:4
相关论文
共 10 条
  • [1] SGTE DATA FOR PURE ELEMENTS
    DINSDALE, AT
    [J]. CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1991, 15 (04): : 317 - 425
  • [2] DENSITY AND INTERFACIAL-TENSION OF LIQUID FE-SI ALLOYS
    DUMAY, C
    CRAMB, AW
    [J]. METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 1995, 26 (01): : 173 - 176
  • [3] Purification of metallurgical grade silicon by a solar process
    Flamant, G.
    Kurtcuoglu, V.
    Murray, J.
    Steinfeld, A.
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (14) : 2099 - 2106
  • [4] KENNETH CM, 2000, ISIJ INT S, V40, P130
  • [5] Thermodynamics of phosphorus in molten silicon
    Miki, T
    Morita, K
    Sano, N
    [J]. METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 1996, 27 (06): : 937 - 941
  • [6] Thermodynamics of solar-grade-silicon refining
    Morita, K
    Miki, T
    [J]. INTERMETALLICS, 2003, 11 (11-12) : 1111 - 1117
  • [7] Pei B.X., 2006, SPECIAL STEEL TECHNO, V12, P5
  • [8] Towards solar grade silicon: Challenges and benefits for low cost photovoltaics
    Pizzini, Sergio
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (09) : 1528 - 1533
  • [9] ROBERT B, 2000, ISIJ INT S, V140, P157
  • [10] TUSET JK, 1992, SILICON CHEM IND, V1, P10