Multiple channels to enhance near-infrared emission from SiO2-SnO2:Er3+ films by Ba2+ ion doping

被引：8

作者：

Zhang, Yangyi ^{[1
,2
]}

Wang, Lixiang ^{[1
]}

Chen, Jiaming ^{[1
]}

Hou, Guozhi ^{[1
]}

Li, Dongke ^{[1
]}

Xu, Jun ^{[1
]}

Xu, Ling ^{[1
]}

Chen, Kunji ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct,Jiangsu Prov Key, Nanjing 210093, Peoples R China

[2] Chuzhou Univ, Sch Mech & Elect Engn, Chuzhou 239000, Anhui, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2021年 / 23卷 / 41期

基金：

国家重点研发计划; 中国博士后科学基金;

关键词：

DOPED SNO2 NANOSTRUCTURES; ENERGY-TRANSFER; OPTICAL-PROPERTIES; SILICA FILMS; ER3+ EMISSION; BAND-GAP; MU-M; PHOTOLUMINESCENCE; NANOCRYSTALS; LUMINESCENCE;

D O I：

10.1039/d1cp03059k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ba2+ ions co-doped SiO2-SnO2:Er3+ thin films are prepared using a sol-gel method combined with a spin-coating technique and post-annealing treatment. The influence of Ba2+ ion doping on the photoluminescence properties of thin films is carefully investigated. The enhancement of near-infrared (NIR) emission of Er3+ ions by as much as 12 times is obtained via co-doping with Ba2+ ions. To illustrate the relevant mechanisms, X-ray diffraction, X-ray photoelectron spectroscopy and comprehensive spectroscopic measurements are carried out. The enhanced NIR emission induced by Ba2+ co-doping can be explained by more oxygen vacancies, improved crystallinity and strong cross-relaxation processes between Er3+ ions. The incorporation of Ba2+ ions into SiO2-SnO2:Er3+ thin films results in a considerable enhancement in the NIR emission, making the thin films more suitable for Si-based optical lasers and amplifiers.

引用

页码：23711 / 23717

页数：7

共 42 条

[1] Strong green-light emitting Tb3+ doped tetragonal ZrO2 nanophosphors stabilized by Ba2+ ions [J].