Ka-Band CMOS Power Amplifier Based on Transmission Line Transformers With Single-Ended Doherty Network

被引：12
|
作者：
Cho, Gwangsik [1 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon 34141, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
CMOS; Doherty; Ka-band; millimeter wave (mm-Wave); mm-Wave; 5G; power amplifier (PA); COMPENSATION; COMBINER; DESIGN; LOAD;
D O I：
10.1109/LMWC.2021.3088585
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ka-band CMOS two-stage Doherty power amplifier (DPA) is presented, whose back-off efficiency is improved by voltage-mode Doherty load modulation. The input and output networks of its power stage are composed of transmission line transformers (TLTs) and single-ended Doherty networks implemented with lumped elements. An adaptive bias circuit to boost the Doherty operation is included in the gate network of the auxiliary amplifier. It shows a power gain of 16.2 dB with 48.2% peak drain efficiency (DE) and 25% 6-dB back-off DE at 26 GHz. It has two times higher 6-dB back-off efficiency in comparison to that of a theoretical class-A power amplifier. It is fabricated in a 28-nm bulk CMOS process and occupies 0.094-mm(2) core size.
引用
收藏
页码：1223 / 1226
页数：4
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