Large Magnetoresistance and Electrical Transport Properties in Reduced Graphene Oxide Thin Film

被引：23

作者：

Haque, Ariful ^{[1
,2
,3
]}

Abdullah-Al Mamun, Md ^{[1
,2
,4
]}

Taufique, M. F. N. ^{[1
,2
,5
]}

Karnati, Priyanka ^{[1
,2
,6
]}

Ghosh, Kartik ^{[1
,2
]}

机构：

[1] Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA

[2] Missouri State Univ, Ctr Appl Sci & Engn, Springfield, MO 65897 USA

[3] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[4] Univ South Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[5] Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA

[6] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2018年 / 54卷 / 12期

关键词：

2-D system; electrical transport; magnetoresistance (MR); reduced graphene oxide (RGO); variable range hopping (VRH); NEGATIVE MAGNETORESISTANCE; GRAPHITE; TRANSPARENT; LOCALIZATION; TRANSITION; INSULATOR;

D O I：

10.1109/TMAG.2018.2873508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a systematic study of room temperature large positive and negative magnetoresistance (MR) in the reduced graphene oxide (RGO) thin-film devices grown by pulsed-laser deposition (PLD) at high and low applied magnetic fields, respectively. Raman spectroscopy, X-ray photoelectron spectroscopy, and electrical measurements on the RGO films help to explain the observed MR properties in the device. The temperature-dependent (5-400 K) electrical characterization of the thin films shows two distinct transport regimes: at low temperature, it follows 2-D Efros-Shoklovoski variable range hopping (VRH) transport mechanism and above 200 K, the device shows Arrhenius-like transport behavior. The crossover from VRH transport to Arrhenius transport is due to shortening in the characteristic lengths in the disordered 2-D system. We interpret the source of negative MR by vacancy and disorder-induced magnetic moments and the diffuse scattering at crystallite boundaries. At the high applied magnetic field, the lifting in degeneracy due to the Lorentz force explains the large positive MR effect. The highest value of the measured MR (160%) is surprisingly high for a non-magnetic material at room temperature, which can be attributed to the greater inhomogeneity in the PLD grown wafer-scale RGO thin films.

引用

页数：9