Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates

被引：51

作者：

Henini, M. ^{[1
]}

Ibanez, J. ^{[2
]}

Schmidbauer, M. ^{[3
]}

Shafi, M. ^{[4
]}

Novikov, S. V. ^{[4
]}

Turyanska, L. ^{[4
]}

Molina, S. I. ^{[5
]}

Sales, D. L. ^{[5
]}

Chisholm, M. F. ^{[6
]}

Misiewicz, J. ^{[7
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CSIC, Inst Jaume Almera, E-08028 Barcelona, Spain

[3] Inst Crystal Growth, D-12489 Berlin, Germany

[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[5] Univ Cadiz, Fac Ciencias, Puerto Real 11510, Cadiz, Spain

[6] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[7] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2827181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth by molecular beam epitaxy of GaBixAs1-x epilayers on (311)B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z-contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311)B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy. (c) 2007 American Institute of Physics.

引用

页数：3

共 16 条

[1] Valence band anticrossing in GaBixAs1-x [J].

Alberi, K. ;

Dubon, O. D. ;

Walukiewicz, W. ;

Yu, K. M. ;

Bertulis, K. ;

Krotkus, A. .

APPLIED PHYSICS LETTERS, 2007, 91 (05)

[2] {111} quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy [J].

Arnoult, A ;

Gonzalez-Posada, F ;

Blanc, S ;

Bardinal, V ;

Fontaine, C .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (3-4) :352-355

[3] GaBiAs: A material for optoelectronic terahertz devices [J].

Bertulis, K. ;

Krotkus, A. ;

Aleksejenko, G. ;

Pacebutas, V. ;

Adomavicius, R. ;

Molis, G. ;

Marcinkevicius, S. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[4] Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy [J].

Cooke, D. G. ;

Hegmann, F. A. ;

Young, E. C. ;

Tiedje, T. .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[5] Giant spin-orbit bowing in GaAs1-xBix [J].

Fluegel, B. ;

Francoeur, S. ;

Mascarenhas, A. ;

Tixier, S. ;

Young, E. C. ;

Tiedje, T. .

PHYSICAL REVIEW LETTERS, 2006, 97 (06)

[6] The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy [J].

Foxon, CT ;

Harrison, I ;

Novikov, SV ;

Winser, AJ ;

Campion, RP ;

Li, T .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3383-3397

[7] Band gap of GaAs1-xBix, 0<x<3.6% [J].

Francoeur, S ;

Seong, MJ ;

Mascarenhas, A ;

Tixier, S ;

Adamcyk, M ;

Tiedje, T .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3874-3876

[8] GROWTH AND ELECTRICAL-TRANSPORT PROPERTIES OF VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES DISPLAYING PERSISTENT PHOTOCONDUCTIVITY [J].

HENINI, M ;

RODGERS, PJ ;

CRUMP, PA ;

GALLAGHER, BL ;

HILL, G .

APPLIED PHYSICS LETTERS, 1994, 65 (16) :2054-2056

[9] Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction [J].

Ibanez, J. ;

Kudrawiec, R. ;

Misiewicz, J. ;

Schmidbauer, M. ;

Henini, M. ;

Hopkinson, M. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)

[10] ORIENTATION DEPENDENT AMPHOTERIC BEHAVIOR OF GROUP-IV IMPURITIES IN THE MOLECULAR-BEAM EPITAXIAL AND VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

LEE, B ;

BOSE, SS ;

KIM, MH ;

REED, AD ;

STILLMAN, GE ;

WANG, WI ;

VINA, L ;

COLTER, PC .

JOURNAL OF CRYSTAL GROWTH, 1989, 96 (01) :27-39

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