Spontaneous Emission from GaN/AlGaN based Terahertz Quantum Cascade Laser Structure grown on GaN Substrate

被引：0

作者：

Terashima, W. ^{[1
]}

Hirayama, H. ^{[1
]}

机构：

[1] RIKEN, Terahertz Quantum Device Lab, Terahertz Wave Res Program, Aoba Ku, Sendai, Miyagi 9800845, Japan

来源：

35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年

关键词：

DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated Nitrides-based THz-QCL structure grown on GaN substrate. The Output power for QCL on GaN substrate showed ten times higher value than that of QCL on MOCVD-GaN template. We for the first time observed THz spontaneous emission spectrum on the Nitrides-based THz-QCL on injection current.

引用

页数：2