Through-Silicon Vias: Drivers, Performance, and Innovations

被引：37

作者：

Thadesar, Paragkumar A. ^{[1
]}

Gu, Xiaoxiong ^{[2
]}

Alapati, Ramakanth ^{[3
]}

Bakir, Muhannad S. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[3] GLOBALFOUNDRIES, Santa Clara, CA 95054 USA

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2016年 / 6卷 / 07期

关键词：

Loss; low power; photodefinition; polymer stress; through-silicon vias (TSVs); X-RAY MICRODIFFRACTION; END-POINT DETECTION; AIR-GAP; INTERPOSER; DESIGN; FABRICATION; RELIABILITY; TECHNOLOGY; STRESSES; MODEL;

D O I：

10.1109/TCPMT.2016.2524691

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To address the abating performance improvements from device scaling, innovative 2.5-D and 3-D integrated circuits with vertical interconnects called through-silicon vias (TSVs) have been widely explored. This paper reviews TSVs with focus on the following: 1) key drivers for TSV-based integration; 2) TSV fabrication techniques; 3) TSV electrical and thermomechanical performance fundamentals and characterization techniques; and 4) novel technologies to attain enhanced performance beyond the state-of-the-art TSVs.

引用

页码：1009 / 1019

页数：11

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