ECR-MBE growth and high excitation properties of GaInN/GaN heterostructures

被引：0
|
作者：
Muller, J [1 ]
Lipinski, M [1 ]
Maksimov, A [1 ]
Forchel, A [1 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a method to reduce plasma self biasing effects during ECR-MBE growth of GaN based on an external magnet positioned on axis to the ECR-source. With this method it is possible to increase the growth rate up to 0.7 mu m/h by using high microwave powers (up to 200 W) to increase the density of excited nitrogen. With this method we have realized GaN and GaInN/GaN QW-structures with high optical efficiency. The GaN-layers show strong excitonic emission with line widths below 5 meV and no yellow luminescence. Optically pumped stimulated emission in stripe excitation geometry (threshold pumping intensity similar to 1 MWcm(2)) was realized up to room temperature.
引用
收藏
页码：371 / 374
页数：4
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