ECR-MBE growth and high excitation properties of GaInN/GaN heterostructures

被引：0

作者：

Muller, J ^{[1
]}

Lipinski, M ^{[1
]}

Maksimov, A ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a method to reduce plasma self biasing effects during ECR-MBE growth of GaN based on an external magnet positioned on axis to the ECR-source. With this method it is possible to increase the growth rate up to 0.7 mu m/h by using high microwave powers (up to 200 W) to increase the density of excited nitrogen. With this method we have realized GaN and GaInN/GaN QW-structures with high optical efficiency. The GaN-layers show strong excitonic emission with line widths below 5 meV and no yellow luminescence. Optically pumped stimulated emission in stripe excitation geometry (threshold pumping intensity similar to 1 MWcm(2)) was realized up to room temperature.

引用

页码：371 / 374

页数：4

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