Defect engineering of the electrochemical characteristics of carbon nanotube varieties

被引:20
作者
Hoefer, Mark A. [1 ]
Bandaru, Prabhakar R. [1 ]
机构
[1] Univ Calif San Diego, Dept Mech & Aerosp Engn, Mat Sci Program, La Jolla, CA 92093 USA
基金
美国国家科学基金会;
关键词
ION-IMPLANTED GRAPHITE; RAMAN-SPECTROSCOPY; AMORPHOUS-CARBON; ELECTRODES; SPECTRA; ENDS;
D O I
10.1063/1.3457227
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multiwalled CNT morphologies. The controlled addition of argon ions was used for varying the charge and type of extrinsic defects. It was indicated from Raman spectroscopy and voltammetry that the electrocatalytic response of hollow type CNTs could be tailored more significantly, compared to bamboo type CNTs which have innately high reactive site densities and are less amenable to modification. An in-plane correlation length parameter was used to understand the variation of the defect density as a function of argon ion irradiation. The work has implications in the design of nanotube based chemical sensors, facilitated through the introduction of suitable reactive sites. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457227]
引用
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页数:6
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