Low-power dual-edge triggered state-retention scan flip-flop

被引:7
作者
Karimiyan, H. [1 ]
Sayedi, S. M. [1 ]
Saidi, H. [1 ]
机构
[1] Isfahan Univ Technol, ECE, Esfahan 8415483111, Iran
关键词
HIGH-PERFORMANCE; STORAGE ELEMENTS; CLOCKING; CIRCUIT; DESIGN;
D O I
10.1049/iet-cdt.2009.0059
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This study presents a dual-edge triggered static scanable flip-flop suitable for low-power applications. The proposed circuit deploys reduced swing-clock and swing-data to manage dynamic power. Furthermore, it employs clock- and power-gating during idle mode to eliminate dynamic power and reduce static power, while retaining its state. The static structure of the circuit makes it feasible to be used in variable frequency power control designs. HSPICE post-layout simulation conducted for 90 nm complementary metal-oxide semiconductor technology indicates that in addition to state retention and test capability, the proposed design, in terms of power-delay product, device count and leakage power is comparable to other high-performance flip-flops.
引用
收藏
页码:410 / 419
页数:10
相关论文
共 34 条
  • [1] Agarwal A, 2002, DES AUT CON, P473, DOI 10.1109/DAC.2002.1012671
  • [2] A leakage reduction methodology for distributed MTCMOS
    Calhoun, BH
    Honoré, FA
    Chandrakasan, AP
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (05) : 818 - 826
  • [3] An energy-efficient dual-edge triggered level-converting flip-flop
    Chiou, Lih-Yih
    Lou, Shien-Chun
    [J]. 2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 1157 - 1160
  • [4] A self-controllable voltage level (SVL) circuit and its low-power high-speed CMOS circuit applications
    Enomoto, T
    Oka, Y
    Shikano, H
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (07) : 1220 - 1226
  • [5] Design methodologies for high-performance noise-tolerant XOR-XNOR circuits
    Goel, S
    Elgamel, MA
    Bayoumi, MA
    Hanafy, Y
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2006, 53 (04) : 867 - 878
  • [6] Gate-length biasing for runtime-leakage control
    Gupta, Puneet
    Kahng, Andrew B.
    Sharma, Puneet
    Sylvester, Dennis
    [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2006, 25 (08) : 1475 - 1485
  • [7] Dynamic state-retention flip-flop for fine-grained power gating with small design and power overhead
    Henzler, Stephan
    Georgakos, Georg
    Eireiner, Matthias
    Nirschl, Thomas
    Pacha, Christian
    Berthold, Joerg
    Schmitt-Landsiedel, Doris
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (07) : 1654 - 1661
  • [8] Level conversion for dual-supply systems
    Ishihara, F
    Sheikh, F
    Nikolic, B
    [J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2004, 12 (02) : 185 - 195
  • [9] Kao J., 2001, SOLID STATE CIRCUITS, P317
  • [10] Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
    Keshavarzi, A
    Ma, S
    Narendra, S
    Bloechel, B
    Mistry, K
    Ghani, T
    Borkar, S
    De, V
    [J]. ISLPED'01: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON LOWPOWER ELECTRONICS AND DESIGN, 2001, : 207 - 212