Enhancements of the electrical properties in Pb1.25(Zr0.52,Ti0.48)O3/Pb1.1(Zr0.52,Ti0.48)O3 ferroelectric multilayered thin films

Ferroelectric multilayered thin film structures consisting of Pb-1(.25)(Zr-0(.52),Ti-0(.48))O-3 and Pb-1(.1)(Zr-0.52,Ti-0(.48))O-3 have fabricated on Pt/Ti/SiO2/Si substrates by sol-gel synthesis. The effect of various layer ratios (m/n) of Pb-1(.25)(Zr-0.52,Ti-0(.48))O-3 and Pb-1.1(Zr-0.52,Ti-0(.48))O-3 thin films on the properties of PZT films were investigated. X-ray photoelectron spectroscopy (XPS) reveals that oxygen vacancies were suppressed by altering m/n. Dense perovskite structures were observed by Scanning electron microscope (SEM) analysis. Dielectric properties were enhanced significantly in the multilayered films. Especially, the epsilon(r) reaches 1873 at 1 kHz with a tan delta of 0.082 for the sample with a m/n of 1/3. Moreover, improved ferroelectricity (2P(r) = 36.2 mu C/cm(2), 2E(c) = 78 kV/cm), reduced leakage current density (2.91 x 10(-7) A/cm(2) at 185 kV/cm), and well fatigue resistance were obtained for the film (m/n = 1/3).