Modulation of spin-valley splitting in a two-dimensional MnPSe3/CrBr3 van der Waals heterostructure

被引:12
|
作者
Wu, Xuefeng [1 ]
Zhou, Jiangpeng [1 ]
Li, Penggang [1 ]
Wu, Yaping [1 ]
Wu, Zhiming [1 ]
Li, Xu [1 ]
Kang, Junyong [1 ]
机构
[1] Xiamen Univ, Dept Phys, OSED, Fujian Prov Key Lab Semicond Mat & Applicat,Jiuji, Xiamen 361005, Peoples R China
关键词
van der Waals heterostructures; 2D magnetic materials; spin-valley coupling; strain engineering; HALF-METALLICITY; DARK-EXCITON; MONOLAYER; GRAPHENE;
D O I
10.1088/1361-6463/ab6057
中图分类号
O59 [应用物理学];
学科分类号
摘要
We perform a systematic investigation of MnPSe3/CrBr3 two-dimensional (2D) van der Waals heterostructures through first-principles calculations. The most stable stacking configuration of MnPSe3/CrBr3 heterostructures is found to have an indirect type-II band structure. Biaxial tensile strain is employed to tailor the spin-valley properties of the heterostructures in terms of the momentum, energy and spin components of the valleys. A novel opposite spin splitting evolution appears at the K and K ' valleys of the top valance band (TVB) with increasing tensile strain. A change from an indirect to a direct band gap is found at 7% tensile strain. A maximum spin splitting of 34.7 meV at the K ' valley is produced simultaneously with valley polarization under a tensile strain of 10%. The spin components distributed at the TVB are found to be controlled by strain-related competition between direct exchange interaction and indirect superexchange interaction of Se (p(x) + p(y) ) and Se p(z) orbitals. Spin polarization precisely regulated by strain can facilitate the manipulation of valley and spin degrees of freedom in MnPSe3/CrBr3 heterostructures, which opens up great potential for novel applications, such as strained sensor, spintronic and valleytronic devices.
引用
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页数:8
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