Defect-formation processes in silicon doped with manganese and germanium

被引：10

作者：

Abdurakhmanov, KP ^{[1
]}

Utamuradova, SB ^{[1
]}

Daliev, KS ^{[1
]}

Tadjy-Aglaeva, SG ^{[1
]}

Ergashev, RM ^{[1
]}

机构：

[1] Mirzo Ulugbek Sci Res Inst Appl Phys, Tashkent 700095, Uzbekistan

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 06期

关键词：

Spectroscopy; Silicon; Manganese; Magnetic Material; Germanium;

D O I：

10.1134/1.1187448

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Deep-level transient spectroscopy has been used to study the effect of Ge atoms introduced into Si during growth manifest no electrical activity, even though their concentration is rather high: 10(16)-10(19) cm(-3). It is established that the presence of Ge atoms in the Si lattice enhances the efficiency of the formation of the deep levels E-c-0.42 eV and E-c-0.54 eV, which are associated with Mn in the Si lattice: the concentration of these deep levels in Si[ge, Mn] samples is a factor of 3-4 greater than in Si[Mn]. It is found that the presence of Ge atoms stabilizes the properties of the Mn levels in Si: They anneal more slowly the in Si[Mn] by a factor of 5-6. It is assumed that the detected effects are associated with the features of the defect of the defect structure of Si doped with Ge and Mn. (C) 1998 American Institute of Physics.

引用

页码：606 / 607

页数：2