Electrical and optical characterization of multilayered thin film based on pulsed laser deposition of metal oxides

被引：19

作者：

Marotta, V

Orlando, S

Parisi, GP

Giardini, A

Perna, G

Santoro, AM

Capozzi, V

机构：

[1] CNR, Ist Mat Speciali, I-85050 Tito Scalo, PZ, Italy

[2] Univ Bari, Dipartmento Fis, I-70126 Bari, Italy

[3] INFM, I-70126 Bari, Italy

来源：

APPLIED SURFACE SCIENCE | 2000年 / 168卷 / 1-4期

关键词：

thin film; semiconducting oxides; laser deposition; gas sensor; optical properties;

D O I：

10.1016/S0169-4332(00)00570-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of semiconducting oxides such as In2O3, SnO2, and multilayers of these two compounds have been deposited by reactive pulsed laser ablation, with the aim to produce toxic gas sensors. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (lambda = 532 nm) on silicon (1 0 0) substrates. A comparison, among indium oxide, tin oxide, and multilayers of indium and tin oxides, has been performed. The influence of physical parameters such as substrate temperature, laser fluence and oxygen pressure in the deposition chamber has been investigated. The deposited films have been characterized by X-ray diffraction (XRD), optical and electric resistance measurements. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：141 / 145

页数：5

共 8 条

[1]

ABELES F, 1972, OPTICAL PROPERTIES S, P21

[2] IMPURITY TRANSITIONS IN THE PHOTO-LUMINESCENCE SPECTRA OF SNO2 [J].