In situ RHEED control of self-organized Ge quantum dots

被引：42

作者：

Nikiforov, AI ^{[1
]}

Cherepanov, VA ^{[1
]}

Pchelyakov, OP ^{[1
]}

Dvurechenskii, AV ^{[1
]}

Yakimov, AI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

基金：

俄罗斯基础研究基金会;

关键词：

GeSi; MBE; quantum dot; RHEED;

D O I：

10.1016/S0040-6090(00)01493-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ registration of high-energy electron diffraction patterns was used for constructing the diagram of structural and morphological states of the Gz film on the Si(100) surface. The following regions identified in the diagram: two-dimensional (2D)-growth, 'hut'- and 'dome'-clusters, 'dome'-clusters with misfit dislocations at the interface. Variations in the lattice constants of the Ge film during, the MBE growth on the: Si(100) surface were determined. An increase in the lattice constant at the (100) surface was attributed to the elastic deformation at the stage of 2D growth and formation of 'hut'-clusters and to the plastic relaxation for the 'dome'-clusters. As a result, epitaxial silicon structures with germanium quantum dots of 15 nm base size at the density of 3 x 10(11) cm(-2) were synthesized. The total electron structure of the hole spectrum of Ge quantum dots in Si was established. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：158 / 163

页数：6

共 23 条

[1] Growth and characterization of self-assembled Ge-rich islands on Si [J].

Abstreiter, G ;

Schittenhelm, P ;

Engel, C ;

Silveira, E ;

Zrenner, A ;

Meertens, D ;

Jager, W .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) :1521-1528

[2] Hopping conduction and field effect in Si modulation-doped structures with embedded Ge quantum dots [J].

Biskupski, G ;

Adkins, CJ ;

Boucher, R ;

Dvurechenskii, AV ;

Nikiforov, AI ;

Pchelyakov, OP ;

Biskupski, G .

PHYSICAL REVIEW B, 1999, 59 (19) :12598-12603

[3] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[4] Evolution of coherent islands in Si1-xGex/Si(001) [J].

Floro, JA ;

Chason, E ;

Freund, LB ;

Twesten, RD ;

Hwang, RQ ;

Lucadamo, GA .

PHYSICAL REVIEW B, 1999, 59 (03) :1990-1998

[5] Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces [J].

Goldfarb, I ;

Briggs, GAD .

SURFACE SCIENCE, 1999, 433 :449-454

[6] Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems [J].

Johnson, HT ;

Freund, LB .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6081-6090

[7] Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1-xGex hut islands [J].

Kubler, L ;

Dentel, D ;

Bischoff, JL ;

Ghica, C ;

Ulhaq-Bouillet, C ;

Werckmann, J .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1053-1055

[8] CYCLIC GROWTH OF STRAIN-RELAXED ISLANDS [J].

LEGOUES, FK ;

REUTER, MC ;

TERSOFF, J ;

HAMMAR, M ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1994, 73 (02) :300-303

[9] In situ RHEED control of direct MBE growth of Ge quantum dots on Si(001) [J].

Markov, VA ;

Nikiforov, AI ;

Pchelyakov, OP .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :736-740

[10] RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots [J].

Markov, VA ;

Cheng, HH ;

Chia, CT ;

Nikiforov, AI ;

Cherepanov, VA ;

Pchelyakov, OP ;

Zhuravlev, KS ;

Talochkin, AB ;

McGlynn, E ;

Henry, MO .

THIN SOLID FILMS, 2000, 369 (1-2) :79-83

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