ESR and optical evidence for a Ni vacancy center in CVD diamond

被引：24
作者：
Iakoubovskii, K [1 ]
Stesmans, A [1 ]
Nouwen, B [1 ]
Adriaenssens, GJ [1 ]
机构：
[1] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Louvain, Belgium
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.62.16587
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Characterization of a series of correlated electron-spin resonance (ESR) and photoluminescence (PL) lines in diamond grown by chemical vapor deposition is reported. The series consists of a Set of structured PL bands in the range 1.8-2.3 eV, and ESR lines due to an S = 1 center with g = 2.0039(1) and D = 35.8(1) mT at 300 K. PL lines are shown to originate from a defect center with the ground state at 2.24 eV below the conduction band, and with several excited states. The whole set of data can be interpreted in terms of a defect containing a neutral interstitial Ni atom at the center of a divacancy.
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页码：16587 / 16594
页数：8
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