Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm

被引：9

作者：

Gao, Feng ^{[1
]}

Luo, Shuai ^{[1
]}

Ji, Hai-Ming ^{[1
]}

Xu, Feng ^{[1
]}

Lv, Zun-Ren ^{[1
]}

Yang, Xiao-Guang ^{[1
]}

Liang, Ping ^{[1
]}

Yang, Tao ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 20期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; ROOM-TEMPERATURE; LONG-WAVELENGTH; BANDWIDTH;

D O I：

10.1063/1.4952433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the generation of 92 nm (-3 dB bandwidth) flat-topped ultrabroad stimulation emission from a chirped InAs/InP quantum dot (QD) laser. A greatly enhanced bandwidth of the gain spectrum is achieved, which is attributed to the additionally broadened quantum dot energy levels utilizing gradually changed height of QDs in the stacked active layers. The laser exhibits a maximum output power of 0.35 W under pulsed conditions, and the average spectral power density of above 3.8 mW/nm is obtained. The ultrabroad lasing spectrum in the wavelength interval of 1.49-1.61 mu m covering S-C-L bands makes such a laser potentially useful as an optical source for various applications being compatible with silica fibers. Published by AIP Publishing.

引用

页数：4

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