共 50 条
- [42] DETERMINATION OF UNIFORMITY FOR THE LIFETIME DISTRIBUTION OF MINORITY CHARGE-CARRIERS IN MONOCRYSTALLINE SILICON INDUSTRIAL LABORATORY, 1986, 52 (02): : 156 - 161
- [43] IR tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots NONDESTRUCTIVE METHODS FOR MATERIALS CHARACTERIZATION, 2000, 591 : 213 - 218
- [44] SOME METHODS OF MEASURING LIFETIME OF NONEQUILIBRIUM CHARGE CARRIERS BASED ON THE MODULATION OF PHOTOCONDUCTIVITY INDUSTRIAL LABORATORY, 1961, 27 (10): : 1223 - 1226
- [46] CONCERNING THE UTILIZATION OF THE PHASE METHOD FOR MEASURING LIFETIME OF NONEQUILIBRIUM CHARGE CARRIERS IN SEMICONDUCTORS SOVIET PHYSICS-SOLID STATE, 1961, 3 (03): : 674 - 679
- [48] Physics of multiwalled carbon nanotubes PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001, 2001, : 86 - 93
- [49] Antilocalization in multiwalled carbon nanotubes PHYSICAL REVIEW B, 2000, 61 (03): : 2375 - 2379
- [50] Phonons in multiwalled carbon nanotubes STRUCTURAL AND ELECTRONIC PROPERTIES OF MOLECULAR NANOSTRUCTURES, 2002, 633 : 425 - 428