Calculation of electron impact ionization co-efficient in β-Ga2O3

被引：0
作者：
Ghosh, Krishnendu [1 ]
Singisetti, Uttam [1 ]
机构：
[1] Univ Buffalo, Dept Elect Engn, State University New York Buffalo, Buffalo, NY 14260 USA
来源：
2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2014年
关键词：
SEMICONDUCTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：71 / +
页数：2
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