A novel silicon detector for energetic electrons with improved linearity characteristics

This paper describes a novel silicon detector with improved linearity characteristics for energetic electrons up to 50 keV. The modified pn-junction detector structure contains a buried implanted n((+)) layer (N similar to 1-5 x 10(15) cm(-3)) in the n-type Si substrate, which is attributed by a near-surface high-field region in the depletion zone. To enable a high-field region of several micrometers depth, high-energy ion implantation with P-31 ions of 10-30 MeV was used. The corresponding electric field distribution of the novel detector is characterized by a constant electric field strength of 10-50 W/cm from the surface down to the depth of the buried implanted layer. Detectors with considerable improved linearity up to electron current densities of 20 A/cm(2) were been fabricated, which have been tested at the e-beam writer SB 350 of Leica Microsystems Lithography for electrons of 50 keV. (C) 2003 Elsevier Science B.V. All rights reserved.