Structural characterisation of energetically deposited Zn1-xMgxO films

被引：0
作者：
Mayes, E. L. H. [1 ]
McCulloch, D. G. [1 ]
Partridge, J. G. [1 ]
机构：
[1] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia
来源：
JOURNAL OF CRYSTAL GROWTH | 2015年 / 412卷
基金：
澳大利亚研究理事会;
关键词：
XANES; Energetic deposition; FCVA; Zn1-xMgxO; Compound oxides; Metal oxides; X-RAY-ABSORPTION; ZNMGO EPILAYERS; ZNO; GROWTH;
D O I：
10.1016/j.jcrysgro.2014.11.019
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Zn1-xMgxO thin films have been energetically deposited from a filtered catholic vacuum arc at moderate temperatures and microstructurally characterised. Partial oxidation ('poisoning) of the Zn0.8Mg0.2 cathode caused layering and phase separation in the films. However, periods of non-reactive ablation steps incorporated into the deposition process minimised the effects of cathode poisoning and enabled dense, phase-pure, wurtzite Zn1-xMgxO to be grown at room temperature and 200 degrees C. Elevated substrate temperature resulted in enlarged grains and increased surface roughness. Increased substrate bias caused reduced crystalline order. X-ray absorption spectra from the homogeneous Zn1-xMgxO films, revealing local atomic bonding, were similar to spectra from single crystal ZnO but with features indicative of defects related to oxygen deficiency. (C) 2014 Elsevier B.V. All rights reserved
引用
收藏
页码：116 / 121
页数：6
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