CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

被引：12

作者：

Carbonetto, S. ^{[1
]}

Garcia-Inza, M. ^{[1
]}

Lipovetzky, J. ^{[1
,2
]}

Carra, M. J. ^{[1
]}

Redin, E. ^{[1
]}

Sambuco Salomone, L. ^{[1
]}

Faigon, A. ^{[1
,2
]}

机构：

[1] Univ Buenos Aires, Fac Ingn, INTECIN, Device Phys Microelect Lab, Buenos Aires, DF, Argentina

[2] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

Dosimeters; MOS devices; radiation effects; solid-state detectors; MOS DOSIMETRY; BIAS; DEVICES;

D O I：

10.1109/TNS.2014.2368361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose the use of a CMOS differential circuit with inherent amplification to enhance the performance of n-channel field oxide MOSFETs as ionizing radiation dosimeters. These new dosimeters are aimed to be used in low dose applications such as X-ray diagnosis. The circuit is presented and described, and a discrete-level prototype was tested as regards sensitivity, temperature variations compensation and signal-to-noise ratio at different operation conditions. Results show that, comparing to a single MOSFET dosimeter, on chip amplification is possible along with temperature induced error attenuation. The highest sensitivity measured with respect to gamma radiation was 0.4 V/rad. The circuit successfully measured the dose delivered in an X-ray image diagnosis environment with a sensitivity of approximately 0.5 V/rad.

引用

页码：3466 / 3471

页数：6

共 18 条

[11] MOSFET dosimeters: The role of encapsulation on dosimetric characteristics in mixed gamma-neutron and megavoltage X-ray fields [J].

Rosenfeld, AB ;

Carolan, MG ;

Kaplan, GI ;

Allen, BJ ;

Khivrich, VI .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1870-1877

[12] RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80-DEGREES-K [J].

SAKS, NS ;

ANCONA, MG ;

MODOLO, JA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1249-1255

[13]

Sarrabayrouse G., 1998, IEEE Instrumentation & Measurement Magazine, V1, P26, DOI 10.1109/5289.685494

[14] Low dose measurement with thick gate oxide MOSFETs [J].

Sarrabayrouse, G. ;

Siskos, S. .

RADIATION PHYSICS AND CHEMISTRY, 2012, 81 (03) :339-344

[15] Radiation Effects in MOS Oxides [J].

Schwank, James R. ;

Shaneyfelt, Marty R. ;

Fleetwood, Daniel M. ;

Felix, James A. ;

Dodd, Paul E. ;

Paillet, Philippe ;

Ferlet-Cavrois, Veronique .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) :1833-1853

[16] Wireless dosimeter: System-on-chip versus system-in-package for biomedical and space applications [J].

Shamim, Atif ;

Arsalan, M. ;

Roy, L. ;

Shams, M. ;

Taff, G. .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2008, 55 (07) :643-647

[17] EVALUATION OF A DUAL BIAS DUAL METAL-OXIDE-SILICON SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DETECTOR AS RADIATION DOSIMETER [J].

SOUBRA, M ;

CYGLER, J ;

MACKAY, G .

MEDICAL PHYSICS, 1994, 21 (04) :567-572

[18] A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeter [J].

Tarr, NG ;

Shortt, K ;

Wang, YB ;

Thomson, I .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (03) :1277-1282

← 1 2 →