CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

被引：12

作者：

Carbonetto, S. ^{[1
]}

Garcia-Inza, M. ^{[1
]}

Lipovetzky, J. ^{[1
,2
]}

Carra, M. J. ^{[1
]}

Redin, E. ^{[1
]}

Sambuco Salomone, L. ^{[1
]}

Faigon, A. ^{[1
,2
]}

机构：

[1] Univ Buenos Aires, Fac Ingn, INTECIN, Device Phys Microelect Lab, Buenos Aires, DF, Argentina

[2] Consejo Nacl Invest Cient & Tecn, RA-1033 Buenos Aires, DF, Argentina

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

Dosimeters; MOS devices; radiation effects; solid-state detectors; MOS DOSIMETRY; BIAS; DEVICES;

D O I：

10.1109/TNS.2014.2368361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose the use of a CMOS differential circuit with inherent amplification to enhance the performance of n-channel field oxide MOSFETs as ionizing radiation dosimeters. These new dosimeters are aimed to be used in low dose applications such as X-ray diagnosis. The circuit is presented and described, and a discrete-level prototype was tested as regards sensitivity, temperature variations compensation and signal-to-noise ratio at different operation conditions. Results show that, comparing to a single MOSFET dosimeter, on chip amplification is possible along with temperature induced error attenuation. The highest sensitivity measured with respect to gamma radiation was 0.4 V/rad. The circuit successfully measured the dose delivered in an X-ray image diagnosis environment with a sensitivity of approximately 0.5 V/rad.

引用

页码：3466 / 3471

页数：6

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