magnetic semiconductor;
molecular beam epitaxy;
germanium;
D O I:
10.1016/j.jmmm.2004.09.034
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We prepare 100 nm thick, epitaxial Ge100-(x+y)(MnxFey) diluted films with Mn and Fe concentrations of several at% using a layer-by-layer deposition scheme at elevated temperature. We measure saturation magnetization m(s) versus temperature curves for a variety of (x,y) combinations and find for fixed temperatures a non-trivial dependence of ms on x and y. Within a certain window in the (x,y) parameter space Ge100-(x+y)(Mn-x,Fe-y) exhibits a Curie temperature of 350 K and m(s) approximate to 10 emu/cm(2) at room temperature. (C) 2004 Elsevier B.V. All rights reserved.
机构:
Helmholtz Zentrum Berlin Mat & Energie GmbH, Struct Res Div Methods & Instruments, D-14109 Berlin, GermanyHelmholtz Zentrum Berlin Mat & Energie GmbH, Struct Res Div Methods & Instruments, D-14109 Berlin, Germany
Paul, Amitesh
Sanyal, Biplab
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机构:
Uppsala Univ, Dept Phys & Mat Sci, SE-75121 Uppsala, SwedenHelmholtz Zentrum Berlin Mat & Energie GmbH, Struct Res Div Methods & Instruments, D-14109 Berlin, Germany