Magnetic characteristics of epitaxial Ge(Mn,Fe) diluted films -: a new room temperature magnetic semiconductor?

被引:23
|
作者
Braak, H [1 ]
Gareev, RR [1 ]
Bürgler, DE [1 ]
Schreiber, R [1 ]
Grünberg, P [1 ]
Schneider, CM [1 ]
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
关键词
magnetic semiconductor; molecular beam epitaxy; germanium;
D O I
10.1016/j.jmmm.2004.09.034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We prepare 100 nm thick, epitaxial Ge100-(x+y)(MnxFey) diluted films with Mn and Fe concentrations of several at% using a layer-by-layer deposition scheme at elevated temperature. We measure saturation magnetization m(s) versus temperature curves for a variety of (x,y) combinations and find for fixed temperatures a non-trivial dependence of ms on x and y. Within a certain window in the (x,y) parameter space Ge100-(x+y)(Mn-x,Fe-y) exhibits a Curie temperature of 350 K and m(s) approximate to 10 emu/cm(2) at room temperature. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:46 / 50
页数:5
相关论文
共 50 条
  • [1] About Ge(Mn) diluted magnetic semiconductor
    Portavoce, A.
    Bertaina, S.
    Abbes, O.
    Chow, L.
    Le Thanh, V.
    MATERIALS LETTERS, 2014, 119 : 68 - 70
  • [2] Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires
    Kim, Ungkil
    Park, Tae-Eon
    Kim, Ilsoo
    Seong, Han-Kyu
    Kim, Myeong-Ha
    Chang, Joonyeon
    Park, Jae-Gwan
    Choi, Heon-Jin
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [3] Chemical and magnetic interactions in Mn- and Fe-codoped Ge diluted magnetic semiconductors
    Paul, Amitesh
    Sanyal, Biplab
    PHYSICAL REVIEW B, 2009, 79 (21):
  • [4] Diluted magnetic semiconductor at finite temperature
    Sun, SJ
    Lin, HH
    PHYSICS LETTERS A, 2004, 327 (01) : 73 - 77
  • [5] Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs
    Shen, A
    Ohno, H
    Matsukura, F
    Sugawara, Y
    Akiba, N
    Kuroiwa, T
    Oiwa, A
    Endo, A
    Katsumoto, S
    Iye, Y
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1069 - 1074
  • [6] Room Temperature Ferromagnetism in Ga1-xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films
    Rai, Ghulam Murtaza
    Iqbal, Muhammad Azhar
    Xu, Yong-bing
    Will, Iain Gordon
    Mahmood, Qasim
    CHINESE JOURNAL OF CHEMICAL PHYSICS, 2012, 25 (03) : 313 - 317
  • [7] Diluted magnetic semiconductor Ge1-xMnxTe films prepared by molecular beam epitaxy
    Chen, WQ
    Teo, KL
    Jalil, MBA
    Liew, YF
    Chong, TC
    THIN SOLID FILMS, 2006, 505 (1-2) : 145 - 147
  • [8] Growth and properties of (Ga, Mn) As: A new III-V diluted magnetic semiconductor
    Matsukura, F
    Oiwa, A
    Shen, A
    Sugawara, Y
    Akiba, N
    Kuroiwa, T
    Ohno, H
    Endo, A
    Katsumoto, S
    Iye, Y
    APPLIED SURFACE SCIENCE, 1997, 113 : 178 - 182
  • [9] Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy
    Yang, Z.
    Zuo, Z.
    Zhou, H. M.
    Beyermann, W. P.
    Liu, J. L.
    JOURNAL OF CRYSTAL GROWTH, 2011, 314 (01) : 97 - 103
  • [10] Electronic transport and magnetic properties of CrTe epitaxial thin films with room temperature ferromagnetism
    Luo, Fu-Sheng
    Wang, Zhao-Cai
    Tang, F.
    Fang, Y.
    Ye, Mao
    Zheng, Ren-Kui
    SURFACES AND INTERFACES, 2025, 57