SnS thin films grown by sulfurization of evaporated Sn layers: Effect of sulfurization temperature and pressure

被引：24
|
作者：
Caballero, R. [1 ]
Conde, V. [1 ]
Leon, M. [1 ]
机构：
[1] Univ Autonoma Madrid, Dept Fis Aplicada, C Francisco Tomas & Valiente 7, E-28049 Madrid, Spain
来源：
THIN SOLID FILMS | 2016年 / 612卷
关键词：
SnS; Sulfurization; SnS2 secondary phase; Earth abundant; Solar cells; SOLAR-CELLS;
D O I：
10.1016/j.tsf.2016.06.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SnS thin films were grown by sulfurization of Sn layers evaporated by electron beam. The effect of sulfurization parameters, such as temperature and pressure, on the properties of tin sulfide layers has been investigated. Ar pressure used during the sulfurization has a strong impact on the development of a proper SnS/Mo back interface. However, the sulfurization temperature is the parameter that regulates the formation of an orthorhombic single phase SnS thin film with the optimum properties to be used as absorber for solar cell devices. Sulfurization temperature of 220 degrees C for 240 min led to the formation of single phase tin sulfide layers. Direct band gap energy about 1.2 eV has been determined. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：202 / 207
页数：6
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