Recent progress in preparation of Ta2O5 film by CVD using Ta(OC2H5)5 as precursor

Tantalum oxide films can be employed as the following aspects, such as the ultrathin gate oxides of silicon chip, the capacitor dielectrics of DRAM, gas sensors, the dielectric layer of solar photovoltaic panels, et al, because of their advantages of high dielectric constant, high refractive index and the compatibility with ULSI processing. The following processes including metal organic chemical vapor deposition, photo-induced chemical vapor deposition, plasma-enhanced chemical vapor deposition, atomic layer chemical vapor deposition and pulsed chemical vapor deposition are reviewed, and the questions existing in these processes are discussed in the present paper. In the above mentioned processes, tantalum ethoxide is used as precursor.