Optical evidence for the effect of gamma-ray irradiation on ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

被引：5

作者：

Lim, Junhwi ^{[1
]}

Lee, Y. S. ^{[1
]}

Yang, Sun A. ^{[2
]}

Bu, Sang Don ^{[2
]}

机构：

[1] Soongsil Univ, Dept Phys, Seoul 06978, South Korea

[2] Chonbuk Natl Univ, Dept Phys, Jeonju 54896, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 68卷 / 11期

关键词：

Pb(Zr; Ti)O-3; Gamma-ray irradiation; Photoluminescence; TEMPERATURE PHOTOLUMINESCENCE; RADIATION; CAPACITORS; RETENTION; SRHFO3;

D O I：

10.3938/jkps.68.1347

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated the visible emission property of Pb(Zr,Ti)O-3 (PZT) thin films irradiated with gammy-ray (gamma-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon gamma-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the gamma-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the gamma-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.

引用

页码：1347 / 1351

页数：5

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