Optical evidence for the effect of gamma-ray irradiation on ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

被引：5
作者：
Lim, Junhwi [1 ]
Lee, Y. S. [1 ]
Yang, Sun A. [2 ]
Bu, Sang Don [2 ]
机构：
[1] Soongsil Univ, Dept Phys, Seoul 06978, South Korea
[2] Chonbuk Natl Univ, Dept Phys, Jeonju 54896, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 68卷 / 11期
关键词：
Pb(Zr; Ti)O-3; Gamma-ray irradiation; Photoluminescence; TEMPERATURE PHOTOLUMINESCENCE; RADIATION; CAPACITORS; RETENTION; SRHFO3;
D O I：
10.3938/jkps.68.1347
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated the visible emission property of Pb(Zr,Ti)O-3 (PZT) thin films irradiated with gammy-ray (gamma-ray) irradiated at various total doses up to 1000 kGy. The PZT thin films were prepared on Pt/Ti/SiO2/Si substrates by using a sol-gel method with a spin-coating process. The visible emission was found to emerge near 550 nm upon gamma-ray irradiation, and the intensity of the emission increased with increasing dose. The spectrum of the gamma-ray-induced emission was quite narrow, which was quite different from that due to normal defects such as oxygen vacancies. We suggest that the gamma-ray irradiation generates inside the PZT films a specific type of defect state that can be detected by using low-temperature photoluminescence spectroscopy.
引用
收藏
页码：1347 / 1351
页数：5
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