Influence of physisorbed water on the conductivity of hydrogen terminated silicon-on-insulator surfaces

被引：23

作者：

Dubey, G.

Lopinskia, G. P.

Rosei, F.

机构：

[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada

[2] Univ Quebec, INRS EMT, Quebec City, PQ J3X 1S2, Canada

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2822417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The sheet resistance of hydrogen terminated silicon-on-insulator substrates increases significantly with time in air due to depletion of free carriers, attributed to the growth of electrically active defects as the surface oxidizes. Surprisingly, physisorbed water (via adsorption from ambient or controlled exposure in vacuum) causes an increase in the conductivity. This effect is largely reversible when the water layer is displaced by inert gas purging, heating, or pumping. The observed conductivity changes are correlated with Hall voltage changes, indicating that the adsorbed water layer induces accumulation of majority carriers on n-doped substrates. (c) 2007 American Institute of Physics.

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页数：3

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