Influence of temperature on the offset voltage of piezoresistive pressure sensors

For monocristalline silicon pressure sensors the knowledge of the phenomenons creating the offset voltage and provoking its drift, presents a particular interest, this study gives an explanation on the existence of the offset volage in the piezoresitif pressure sensors and its thermal behaviour. Using different models of majority carriers mobility in silicon, this paper presents a new formula for the first and the second temperature coefficient alpha and beta in function of doping concentration N (cm(-3)). On the other hand, this new presentation enable us to present the thermal behaviour of piezoresistive pressure sensors in function of two parameters namely the doping concentration N (cm(-3)) and temperature T (degrees C) then we report the effect of the temperature on the offset voltage.