Influence of temperature on the offset voltage of piezoresistive pressure sensors

被引：0

作者：

lain, Mohamed Ras ^{[1
]}

chaabi, Abdelhafid ^{[1
]}

机构：

[1] Univ Constantine, Fac Sci Ingn, Dept Elect, Route Ain El Bey, Algeria

来源：

COMPUTATION IN MODERN SCIENCE AND ENGINEERING VOL 2, PTS A AND B | 2007年 / 2卷

关键词：

silicon; temperature coefficient; doping concentration; temperature; offset voltage;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

For monocristalline silicon pressure sensors the knowledge of the phenomenons creating the offset voltage and provoking its drift, presents a particular interest, this study gives an explanation on the existence of the offset volage in the piezoresitif pressure sensors and its thermal behaviour. Using different models of majority carriers mobility in silicon, this paper presents a new formula for the first and the second temperature coefficient alpha and beta in function of doping concentration N (cm(-3)). On the other hand, this new presentation enable us to present the thermal behaviour of piezoresistive pressure sensors in function of two parameters namely the doping concentration N (cm(-3)) and temperature T (degrees C) then we report the effect of the temperature on the offset voltage.

引用

页码：1293 / 1297

页数：5

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