Condition Monitoring for Device Reliability in Power Electronic Converters: A Review

被引:914
作者
Yang, Shaoyong [1 ]
Xiang, Dawei [2 ]
Bryant, Angus [1 ]
Mawby, Philip [1 ]
Ran, Li [2 ]
Tavner, Peter [2 ]
机构
[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
[2] Univ Durham, Sch Engn & Comp Sci, Durham DH1 3LE, England
基金
英国工程与自然科学研究理事会;
关键词
Condition monitoring (CM); failure mechanism; fault detection; power electronics; prognosis; reliability; CONDUCTED ELECTROMAGNETIC EMISSIONS; TRANSIENT JUNCTION TEMPERATURE; LIFETIME PREDICTION; FAILURE MECHANISMS; IGBT MODULES; SHORT-CIRCUIT; SOLDER JOINTS; STRESS; MODELS; SIMULATION;
D O I
10.1109/TPEL.2010.2049377
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.
引用
收藏
页码:2734 / 2752
页数:19
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