Multi-field modulation of transport properties in critical state (La1-yPry)0.5Sr0.5MnO3 thin films

被引：0
作者：
Li, Hui-Di [1 ,2 ]
Li, Xin-Yu [1 ,2 ]
Li, Wei [1 ,2 ]
Wang, Shuan-Hu [1 ,2 ]
Chen, Chang-Le [1 ,2 ]
Jin, Ke-Xin [1 ,2 ]
机构：
[1] Northwestern Polytech Univ, MOE Key Lab Mat Phys & Chem Extraordinary Condit, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, Shaanxi Key Lab Condensed Matter Struct & Propert, Xian 710072, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2022年 / 128卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Manganites; Critical state; Double exchange; MnO6; octahedral; COLOSSAL-MAGNETORESISTANCE; MAGNETIC-FIELD; STRAIN;
D O I：
10.1007/s00339-022-06067-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, we report the related transport properties of (La1-yPry)(0.5)Sr0.5MnO3 (y = 0.1, 0.2, 0.3, 0.4 and 0.5) films prepared by pulsed laser deposition. The transport properties of the films with different fields applied, such as optical field, magnetic field and strain field, were investigated. The results show that the resistance increases and the metal-insulator transition temperature shifts to lower temperature with the increasing of Pr doping. However, the film with the doping amount of 0.5 exhibits an insulation characteristic, and showed transient photoconductivity effect, with a relative change of photo-resistance of 7.2% at low temperature. Otherwise, a negative magneto-resistance of 54% was observed at 80 K and 1 T magnetic field. Further, by using an external electric field to modulate the films grown on the PbMg1/3Nb2/3O3-PbTiO3 substrate, it was found that the electric field reduced the resistance and had a faking effect on the relative change of the photo-resistance. It is mainly attributed to the influence of the external field on lattice distortion and charge carrier delocalization.
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页数：8
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