Electrode dependence of resistance switching in NiO thin films

被引：0
作者：
Kim, D. -W. [1 ]
Shin, D. S.
Chang, S. H.
Park, B. H.
Jung, R.
Li, X. S.
Kim, D. C.
Lee, C. -W.
Seo, S.
机构：
[1] Hanyang Univ, Dept Appl Phys, Ansan 426791, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[3] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
[4] Konkuk Univ, Res Ctr Organ Display, Seoul 143701, South Korea
[5] Samsung Adv Inst Technol, Suwon 440600, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 51卷
关键词：
resistance switching; NiO; current-voltage measurement;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the resistance switching behavior of NiO thin films grown on Pt bottom electrodes, with top electrodes of Pt, An and Ni. NiO/Pt films with all the top electrodes show reversible switching from high-resistance state (HRS) to low-resistance state (LRS) and vice versa during unipolar current-voltage (I - V) measurements. The resistance switching ratio of the Au/NiO/Pt structure is much smaller than those of others. The HRS I - V curve of the Au/NiO/Pt structure is linear, while those of Pt/NiO/Pt and Ni/NiO/Pt structures axe nonlinear. This result manifests the role of the top electrode material in the resistance switching behavior of the NiO thin films.
引用
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页码：S88 / S91
页数：4
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