Gain-flattened broadband Er3+-doped silica fibre amplifier with low noise characteristics

被引：17

作者：

Yamada, M ^{[1
]}

Ono, H ^{[1
]}

Ohishi, Y ^{[1
]}

机构：

[1] NTT, Optoelect Labs, Tokai, Ibaraki 3191193, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 18期

关键词：

D O I：

10.1049/el:19981273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have developed a broadband silica-based EDFA with a wide flat amplification bandwidth of 66nm, an average gain of 17dB and a low noise figure of < 5dB, by employing a hybrid configuration and a gain equaliser.

引用

页码：1747 / 1748

页数：2

共 11 条

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[2]

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[5]

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[7] Broadband and gain-flattened amplifier composed of a 1.55 mu m-band and a 1.58 mu m-band Er3+-doped fibre amplifier in a parallel configuration [J].

Yamada, M ;

Ono, H ;

Kanamori, T ;

Sudo, S ;

Ohishi, Y .

ELECTRONICS LETTERS, 1997, 33 (08) :710-711

[8] A low-noise and gain-flattened amplifier composed of a silica-based and a fluoride-based Er3+-doped fiber amplifier in a cascade configuration [J].

Yamada, M ;

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IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (05) :620-622

[9]

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[10]

YAMADA M, 1997, OFC 9M

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