Effect of Ar/(Ar+O2) ratio on the microstructures and dielectric properties of Zn2SnO4 thin films by RF magnetron sputtering

被引：1

作者：

Chen, Yih-Chien ^{[1
]}

Shen, Yan-Ru ^{[1
]}

机构：

[1] Lunghwa Univ Sci & Technol, Dept Elect Engn, Taoyuan, Taiwan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 10期

关键词：

CERAMICS; TEMPERATURE;

D O I：

10.1007/s10854-016-5150-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microstructures and dielectric properties of Zn2SnO4 thin films were investigated. Zn2SnO4 thin films were prepared using the radio frequency magnetron sputtering with various Ar/(Ar+O-2) ratios. When the Ar/(Ar+O-2) ratio was increased from 0.4 to 0.8, the grain size became larger gradually. The thickness and surface roughness of Zn2SnO4 thin films increased as the Ar/(Ar+O-2) ratio increased from 0.4 to 0.8. Dielectric constants () of 15-25 and loss factor of 0.42-0.44 of Zn2SnO4 thin films were measured at 1 MHz with Ar/(Ar+O-2) ratio in the range of 0.4-0.8.

引用

页码：10562 / 10565

页数：4

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